Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
نویسندگان
چکیده
منابع مشابه
Measurement of generation parameters on Ru/HfO2/Si MOS capacitor
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2013
ISSN: 2162-8769,2162-8777
DOI: 10.1149/2.010305jss